Electrical Properties of S~+ Implanted into SI GaAs
SI GaAS中S~+注入的电学特性

The electrical properties of S~+ implanted into SI GaAs after conventionally thermal anne-aling (CTA)and rapidly thermal annealing (RTA) have been studied. The rapid diffusionand redistribution of S~+ implanted into GaAs after CTA depend not on conventional diffusionof S or arsenic vacancy V_(AS), but on enhanced diffusion by ion implantation.By RTA techniqueenhanced diffusion can be restrained, redistribution of S~+ implanted can be decreased greatlyand thin active layer suitable for fabricating GaAs MESFET devices can be obtained.