%0 Journal Article
%T Electrical Properties of S~+ Implanted into SI GaAs<br>SI GaAS中S~+注入的电学特性
%A Xia Guanqun/
%A <br>夏冠群
%A 关安民
%A 耿海阳
%A 王渭源
%J 半导体学报
%D 1989
%I 
%X The electrical properties of S~+ implanted into SI GaAs after conventionally thermal anne-aling (CTA)and rapidly thermal annealing (RTA) have been studied. The rapid diffusionand redistribution of S~+ implanted into GaAs after CTA depend not on conventional diffusionof S or arsenic vacancy V_(AS), but on enhanced diffusion by ion implantation.By RTA techniqueenhanced diffusion can be restrained, redistribution of S~+ implanted can be decreased greatlyand thin active layer suitable for fabricating GaAs MESFET devices can be obtained.
%K GaAs
%K ~(32)S~+
%K Ion implantation
%K RTA
%K Diffusion
%K Redistribution<br>砷化镓
%K 离子注入
%K 快速热退火
%K 扩散
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8C819D913AE23637&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=8C044EC256B1039D&eid=DEBDB7F30FBA7F9B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3