Bias Annealing of Radiation Induced Positive Trapped Charges in Metal Oxide Semiconductor Transistor
MOS晶体管中辐照引起的陷阱正电荷的强压退火

Positive trapped charges are induced by ionizing radiation in the SiO\-2 layer of MOS structure. The trapped charges are rapidly decreased at the strong positive gate bias(+20V). This results from that the positive charges are recombined with electrons injected from the Si substrate into the SiO\-2 layer due to the positive bias. Positive bias annealing is effective on NMOS transistor as well as PMOS transistor. The annealing experimental results of radiated NMOS and PMOS transistors and the mechanism of bias annealing are discussed and analysed.