%0 Journal Article
%T Bias Annealing of Radiation Induced Positive Trapped Charges in Metal Oxide Semiconductor Transistor<br>MOS晶体管中辐照引起的陷阱正电荷的强压退火
%A YAO Yu
%A |juan
%A ZHANG Zheng
%A |xuan
%A {
%A }
%A JIANG Jing
%A |he
%A HE Bao
%A |ping
%A LUO Yin
%A |hong
%A <br>姚育娟
%A 张正选
%A 姜景和
%A 何宝平
%A 罗尹虹
%J 半导体学报
%D 2000
%I 
%X Positive trapped charges are induced by ionizing radiation in the SiO\-2 layer of MOS structure. The trapped charges are rapidly decreased at the strong positive gate bias(+20V). This results from that the positive charges are recombined with electrons injected from the Si substrate into the SiO\-2 layer due to the positive bias. Positive bias annealing is effective on NMOS transistor as well as PMOS transistor. The annealing experimental results of radiated NMOS and PMOS transistors and the mechanism of bias annealing are discussed and analysed.
%K bias annealing
%K radiation induced positive trapped charges
%K MOS transistor<br>偏压退火
%K 辐照引起的陷阱正电荷
%K MOS晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AA58AB5CBDFFC6D0&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=73648F51F187AC5E&eid=9C82B18080268586&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10