Optical Effect on the Uniformity of MESFET Threshold Voltage
光照对阈值电压均匀性的影响

The uniformity of GaAs MESFET threshold voltage is an important parameter for GaAs wafer,especially for digital IC application.The optical effect on the uniformity of MESFET threshold voltage is studied.Results show that optical radiation enhances the drain source current of the GaAs MESFET,and makes the threshold voltage to move toward negative direction.The optical radiation also enhances the uniformity of MESFET threshold voltage.Deep level defects is one of the factors that response for the distribution of MESFET threshold voltage.Optical radiation eliminates the effect of deep level defects on MESFET threshold voltage uniformity.