%0 Journal Article
%T Optical Effect on the Uniformity of MESFET Threshold Voltage<br>光照对阈值电压均匀性的影响
%A Zhu Chaosong
%A Xia Guanqun
%A Li Chuanhai
%A Zhan Yan
%A <br>朱朝嵩
%A 夏冠群
%A 李传海
%A 詹琰
%J 半导体学报
%D 2002
%I 
%X The uniformity of GaAs MESFET threshold voltage is an important parameter for GaAs wafer,especially for digital IC application.The optical effect on the uniformity of MESFET threshold voltage is studied.Results show that optical radiation enhances the drain source current of the GaAs MESFET,and makes the threshold voltage to move toward negative direction.The optical radiation also enhances the uniformity of MESFET threshold voltage.Deep level defects is one of the factors that response for the distribution of MESFET threshold voltage.Optical radiation eliminates the effect of deep level defects on MESFET threshold voltage uniformity.
%K GaAs
%K MESFET
%K photosensitive effect
%K threshold voltage<br>砷化镓
%K MESFET
%K 光敏效应
%K 阈值电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AF6B9DDF8F6516B9&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=0B39A22176CE99FB&sid=31611641D4BB139F&eid=BBF7D98F9BEDEC74&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9