A Model for a g-r Noise in Optoelectronic Coupled Devices
光电耦合器件g-r噪声模型

g-r noise (generation-recombination noise) in optoelectronic coupled devices(OCDs) is studied in a wide bias range.Experimental results demonstrate that the magnitude of g-r noise becomes large and then shrinks as the input current increases,while its intrinsic frequency gets large.By measuring the front and back noise of OCDs,it is also discussed that the source of g-r noise in OCDs is a photosensitive transistor.Based on the mechanism of carrier number fluctuations,a g-r noise model in OCDs is developed.The experimental results agree well with the developed model.