%0 Journal Article
%T A Model for a g-r Noise in Optoelectronic Coupled Devices<br>光电耦合器件g-r噪声模型
%A Bao Junlin
%A Zhuang Yiqi
%A Du Lei
%A Wu Yong
%A Ma Zhongfa
%A <br>包军林
%A 庄奕琪
%A 杜磊
%A 吴勇
%A 马仲发
%J 半导体学报
%D 2005
%I 
%X g-r noise (generation-recombination noise) in optoelectronic coupled devices(OCDs) is studied in a wide bias range.Experimental results demonstrate that the magnitude of g-r noise becomes large and then shrinks as the input current increases,while its intrinsic frequency gets large.By measuring the front and back noise of OCDs,it is also discussed that the source of g-r noise in OCDs is a photosensitive transistor.Based on the mechanism of carrier number fluctuations,a g-r noise model in OCDs is developed.The experimental results agree well with the developed model.
%K 1/f noise
%K g-r noise
%K OCD
%K deep-level defects<br>1/f噪声
%K g-r噪声
%K 光电耦合器件
%K 深能级缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9CA2636B7671C851&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=83B38B9EF611BE13&eid=E5572679EEAEEC9C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12