Focused Ion Beam Induced Metalorganic Chemical Vapor Deposition of C-Pt Thin Film
聚焦离子束诱发金属有机化学气相淀积碳-铂薄膜

C-Pt film is prepared by focused ion beam induced MOCVD.A theoretical model is presented to describe the relationship between deposition rate and processing parameters.From the experiment,the deposition rate increases and the resistivity of thin film decreases with the rising of ion beam current.The varying composition of C-Pt film and the mechanism of experimental result are also discussed.