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半导体学报 2001
Effects of Argon Gas Flow Rate on Oxygen and Carbon Concentration in CZSi Crystals
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Abstract:
By modifying the pattern and velocity of argon flow,the silicon crystals with different oxygen and carbon contents are obtained.Through numeric simulation,the streamline of argon gas flow is plotted for the first time,with the optimum condition of argon flow with the lowest oxygen and carbon content obtained.