%0 Journal Article
%T Effects of Argon Gas Flow Rate on Oxygen and Carbon Concentration in CZSi Crystals<br>硅单晶生长中氩气流动对氧碳含量的影响
%A REN Bing yan
%A ZHANG Zhi cheng
%A LIU Cai chi
%A HAO Qiu yan
%A WANG Meng
%A <br>任丙彦
%A 张志成
%A 刘彩池
%A 郝秋燕
%A 王猛
%J 半导体学报
%D 2001
%I 
%X By modifying the pattern and velocity of argon flow,the silicon crystals with different oxygen and carbon contents are obtained.Through numeric simulation,the streamline of argon gas flow is plotted for the first time,with the optimum condition of argon flow with the lowest oxygen and carbon content obtained.
%K CZSi
%K argon flow
%K numeric simulation
%K oxygen and carbon content<br>CZSi
%K 氩气流
%K 数值模拟
%K 氧碳含量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=818ADDA6E346AECF&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=B240D359488D2362&eid=8EA44A8F6C7F424F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11