Preparation and Properties of GaN Films on GaAs (110) Substrates
溅射后退火反应法制备GaN薄膜的结构与发光性质

High quality GaN films are prepared by sputtering post annealing reaction technique on GaAs (110) substrates.Measurement results by XRD,XPS,and TEM indicate that the polycrystalline crystal GaN with hexagonal structure is successfully grown.An intense room temperature photoluminescence peak at 368nm of the films is observed.