%0 Journal Article
%T Preparation and Properties of GaN Films on GaAs (110) Substrates<br>溅射后退火反应法制备GaN薄膜的结构与发光性质
%A 杨莺歌
%A 马洪磊
%A 薛成山
%A 庄惠照
%A 郝晓涛
%A 马瑾
%J 半导体学报
%D 2003
%I 
%X High quality GaN films are prepared by sputtering post annealing reaction technique on GaAs (110) substrates.Measurement results by XRD,XPS,and TEM indicate that the polycrystalline crystal GaN with hexagonal structure is successfully grown.An intense room temperature photoluminescence peak at 368nm of the films is observed.
%K GaN films
%K GaAs (110) substrates
%K photoluminescence
%K sputtering post
%K annealing
%K reaction technique<br>GaN薄膜
%K GaAs(110)衬底
%K 光致发光
%K 溅射后退火反应法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FAEDAC209AD69AC5&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=E158A972A605785F&sid=117BC32987199759&eid=A22854835F81B3F8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=18