MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0～7.0) and growth rate (0.437 and 0.791μm/h).Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate,P/In BEP ratio,cracker zone temperature，and growth temperature.The parameters have been optimized carefully via the results of Hall measurements.For a typical sample,77K electron mobility of 4.57e4cm2/（V·s） and electron concentration of 1.55e15cm－3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.