%0 Journal Article
%T MBE Growth of High Electron Mobility InP Epilayers
%A Shu Yongchun
%A Yao Jianghong
%A Lin Yaowang
%A Xing Xiaodong
%A Pi Biao
%A Xu Bo
%A Wang Zhanguo
%A and Xu Jingjun
%A <br>Shu Yongchun
%A Yao Jianghong
%A Lin Yaowang
%A Xing Xiaodong
%A Pi Biao
%A Xu Bo
%A Wang Zhanguo
%A and Xu Jingjun
%J 半导体学报
%D 2005
%I 
%X The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0～7.0) and growth rate (0.437 and 0.791μm/h).Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate,P/In BEP ratio,cracker zone temperature，and growth temperature.The parameters have been optimized carefully via the results of Hall measurements.For a typical sample,77K electron mobility of 4.57e4cm2/（V·s） and electron concentration of 1.55e15cm－3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.
%K SSMBE
%K high electron mobility
%K InP epilayers<br>SSMBE
%K high
%K electron
%K mobility
%K InP
%K epilayers
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=35F23ED77111939F&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=5D311CA918CA9A03&sid=44B95CDA8EBD6F56&eid=65B62960A2E224C9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13