Experimental Study on a Si/a-Si:H Heterojunction Microwave Bipolar Transistor
Si/a-Si:H异质结微波双极型晶体管实验研究
Wang Yinsheng/Nanjing Electronic Devices Institute,
Nanjing Sheng Wenwei/Nanjing Electronic Devices Institute,
Nanjing Wang Jianyuan/Nanjing Electronic Devices Institute,
Nanjing Zhang Xiaoming/Nanjing Electronic Devices Institute,
Nanjing Xiong Chengkun/Nanjing Electronic Devices Institute,
Nanjing Zhu Enjun/Institute of Microelectronics,
Beijing University,
Beijing,
王因生,
盛文伟,
汪建元,
张晓明,
熊承堃,
朱恩均
Keywords: a-Si:H,Heterojunction,Microwave bipolar transistor
Si／a－Si：H,微波,双极晶体管
Abstract:
本文首次报道采用重掺杂的氢化非晶硅(n~+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.该器件内基区方块电阻2kΩ/□,基区宽度0.1μm,共发射极最大电流增益21(V_(cB)=6V,I_c=15mA),发射极Gummel数G_B值已达1.4×10~(14)Scm~(-4).由S参数测得电流增益截止频率f_s=5.5GHz,最大振荡频率f_(max)=7.5GHz.在迄今有关Si/a-Si HBT的报道中,这是首次报道可工作于微波领域里的非晶硅发射极异质结晶体管.
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