%0 Journal Article
%T Experimental Study on a Si/a-Si:H Heterojunction Microwave Bipolar Transistor<br>Si/a-Si:H异质结微波双极型晶体管实验研究
%A Wang Yinsheng/Nanjing Electronic Devices Institute
%A Nanjing Sheng Wenwei/Nanjing Electronic Devices Institute
%A Nanjing Wang Jianyuan/Nanjing Electronic Devices Institute
%A Nanjing Zhang Xiaoming/Nanjing Electronic Devices Institute
%A Nanjing Xiong Chengkun/Nanjing Electronic Devices Institute
%A Nanjing Zhu Enjun/Institute of Microelectronics
%A Beijing University
%A Beijing
%A <br>王因生
%A 盛文伟
%A 汪建元
%A 张晓明
%A 熊承堃
%A 朱恩均
%J 半导体学报
%D 1989
%I 
%X 本文首次报道采用重掺杂的氢化非晶硅(n~+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.该器件内基区方块电阻2kΩ/□,基区宽度0.1μm,共发射极最大电流增益21(V_(cB)=6V,I_c=15mA),发射极Gummel数G_B值已达1.4×10~(14)Scm~(-4).由S参数测得电流增益截止频率f_s=5.5GHz,最大振荡频率f_(max)=7.5GHz.在迄今有关Si/a-Si HBT的报道中,这是首次报道可工作于微波领域里的非晶硅发射极异质结晶体管.
%K a-Si:H
%K Heterojunction
%K Microwave bipolar transistor<br>Si／a－Si：H
%K 微波
%K 双极晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307095EFD2DB4B9BDB0&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=B31275AF3241DB2D&sid=D93AD940782892D0&eid=A94616C4391AA5EF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2