Structural Research of RF-Sputtered Silicon Carbide
RF溅射碳化硅薄膜的结构研究

Silicon carbide films were obfained through RF-sputtering.The structure of the films isstudied by using modern analytical techniques such as AES, XPS, TEM and UPS.For RF-sputtered films,the composition is about Si: C=1:1, the predominant chemical bond is covalent,and the films are amorphous.There are a lot of defects in the short range structure,whichis not an ideal amorphous structure with a longer band fail.