%0 Journal Article
%T Structural Research of RF-Sputtered Silicon Carbide<br>RF溅射碳化硅薄膜的结构研究
%A Wang Yinghua/
%A <br>王英华
%A 汤海鹏
%A 田民波
%A 李恒德
%J 半导体学报
%D 1989
%I 
%X Silicon carbide films were obfained through RF-sputtering.The structure of the films isstudied by using modern analytical techniques such as AES, XPS, TEM and UPS.For RF-sputtered films,the composition is about Si: C=1:1, the predominant chemical bond is covalent,and the films are amorphous.There are a lot of defects in the short range structure,whichis not an ideal amorphous structure with a longer band fail.
%K Silicon carbide
%K Sputtering film
%K Structure
%K Amorphous<br>碳化硅
%K 溅射
%K 薄膜
%K 结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=58FA2D69C924391D&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=07C6E4664BB7C5DA&eid=8CE1095CD639AEF4&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=1