Radiating and Annealing on CMOS Operation Amplifier
CMOS运算放大器的辐照和退火行为

The behavior of the CMOS op-amps exposed to the ionizing radiation and annealing characteristic after irradiation in different biases and temperature are described.The tested characteristics include all electrical parameters of op-amps and inner transistor,and the current and voltage of the nodes of the subsidiary circuits.The change of radiation-induced oxide trapped charge and Si/SiO 2 interface state density depends on the annealing biases and temperature in quite extent.