%0 Journal Article
%T Radiating and Annealing on CMOS Operation Amplifier<br>CMOS运算放大器的辐照和退火行为
%A Ren Diyuan
%A Lu Wu
%A Guo Qi
%A Yu Xuefeng
%A Wang Minggang
%A Hu Yuhong
%A Zhao Wenkui
%A <br>任迪远
%A 陆妩
%A 郭旗
%A 余学锋
%A 王明刚
%A 胡浴红
%A 赵文魁
%J 半导体学报
%D 2004
%I 
%X The behavior of the CMOS op-amps exposed to the ionizing radiation and annealing characteristic after irradiation in different biases and temperature are described.The tested characteristics include all electrical parameters of op-amps and inner transistor,and the current and voltage of the nodes of the subsidiary circuits.The change of radiation-induced oxide trapped charge and Si/SiO 2 interface state density depends on the annealing biases and temperature in quite extent.
%K CMOS op-amps
%K ionizing radiation
%K annealing<br>CMOS运算放大器
%K 电离辐射
%K 退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EEC3F5F833FC23FC&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=507521DBC725630F&eid=7F9B7E84827A650F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=3