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半导体学报 1990
Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film
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Abstract:
This paper has studied the characteristics of bulk electron trap and interface state of rapidthermal nitrided SiO_2 film and reoxidized nitrided SiO_2 film with the technique of avalanchehotelectron injection.The origin and discharge mechanism of electron trap are revealed.Thechanges of interface state density with nitridation ime and flatband voltage shift with injectiontime are observed and explained.An effective way of decreasing bulk electron trapdensity and interface state density is put forward.
