%0 Journal Article
%T Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film<br>快速热氮化SiO_2膜陷阱特性的研究
%A Chen Pusheng/Dept of Physics
%A South China University of TechnologyYang Guangyou/Dept of Physics
%A South China University of TechnologyLiu Baiyong/Dept of Physics
%A South China University of TechnologyLiu Zhihong/Dept of Electrical
%A Electronic Engineering
%A University of Hong KongCheng Yaozong/Dept of Electrical
%A Electronic Engineering
%A University of Hong Kong
%A <br>陈蒲生
%A 杨光有
%A 刘百勇
%J 半导体学报
%D 1990
%I 
%X This paper has studied the characteristics of bulk electron trap and interface state of rapidthermal nitrided SiO_2 film and reoxidized nitrided SiO_2 film with the technique of avalanchehotelectron injection.The origin and discharge mechanism of electron trap are revealed.Thechanges of interface state density with nitridation ime and flatband voltage shift with injectiontime are observed and explained.An effective way of decreasing bulk electron trapdensity and interface state density is put forward.
%K Electron trap
%K Interface states
%K Avalanche
%K Discharge
%K Hot-electron injection<br>SiO2膜
%K 热氮化
%K 电子陷阱
%K 电子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38A2B8DABF062A88CE&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=B31275AF3241DB2D&sid=BC88D6B0750E09D1&eid=8F2250DA83AF77B8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=1