Properties of TiN Films Prepared by a Hollow Cathode Discharge System
空心阴极离子淀积TiN薄膜特性研究
Gao Yuzhi/Institute of Microelectronics,
Peking UniversityXia Zonghuang/Institute of Microelectronics,
Peking UniversityWu Guoying/Institute of Microelectronics,
Peking UniversityZhang Lichun/Institute of Microelectronics,
Peking UniversityHuang Jiqun/Beijing Cutting Tool,
Measuring PlantZhang Dexian/Beijing Cutting Tool,
Measuring Plant,
高玉芝,
夏宗璜,
武国英,
张利春,
黄济群,
张德贤
Keywords: TiN,Hollow cathode discharge deposition,diffusion barrier
氮化钛,空心,阴极,离子淀积
Abstract:
本文用空心阴极离子淀积系统,在氮和氩的混合气体中淀积了TiN薄膜.X射线衍射方法、俄歇电子谱(AES)和电学测量等方法用来研究分析了TiN薄膜的结构、组分和薄膜电阻率.该TiN薄膜有很低的电阻率,其电阻率约为25μΩcm.Al/TiN/Si金属化系统经550℃、30分钟热退火后,卢瑟富背散射(RBS)分析结果表明,没有发现互扩散现象,说明TiN在硅集成电路中是一种良好的扩散势垒材料.
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