%0 Journal Article
%T Properties of TiN Films Prepared by a Hollow Cathode Discharge System<br>空心阴极离子淀积TiN薄膜特性研究
%A Gao Yuzhi/Institute of Microelectronics
%A Peking UniversityXia Zonghuang/Institute of Microelectronics
%A Peking UniversityWu Guoying/Institute of Microelectronics
%A Peking UniversityZhang Lichun/Institute of Microelectronics
%A Peking UniversityHuang Jiqun/Beijing Cutting Tool
%A Measuring PlantZhang Dexian/Beijing Cutting Tool
%A Measuring Plant
%A <br>高玉芝
%A 夏宗璜
%A 武国英
%A 张利春
%A 黄济群
%A 张德贤
%J 半导体学报
%D 1989
%I 
%X 本文用空心阴极离子淀积系统,在氮和氩的混合气体中淀积了TiN薄膜.X射线衍射方法、俄歇电子谱(AES)和电学测量等方法用来研究分析了TiN薄膜的结构、组分和薄膜电阻率.该TiN薄膜有很低的电阻率,其电阻率约为25μΩcm.Al/TiN/Si金属化系统经550℃、30分钟热退火后,卢瑟富背散射(RBS)分析结果表明,没有发现互扩散现象,说明TiN在硅集成电路中是一种良好的扩散势垒材料.
%K TiN
%K Hollow cathode discharge deposition
%K diffusion barrier<br>氮化钛
%K 空心
%K 阴极
%K 离子淀积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=04E5CBE4C2EAE00C&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=9296A146D1D94BC4&eid=37F781FD8E744761&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=1