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OALib Journal期刊
ISSN: 2333-9721
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SiGe HBT with fmax of 157GHz Based on MBE
基于MBE的fmax为157GHz的SiGe HBT器件

Keywords: self-align,air bridge,SiGe material
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,空气桥,SiGe合金材料,SiGeHBT,器件,Based,研究,材料,生长,最高振荡频率,晶体管,应用,集成电路,模拟

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Abstract:

For analog IC applications,not only f T of Si transistor is concerned,but f max of Si transistors is also concerned.In this study,the research for improvement on SiGe HBT f max of 157GHz has been undertaken based on MBE SiGe materials.

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