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Keywords: self-align,air bridge,SiGe material自对准,空气桥,SiGe合金材料,SiGeHBT,器件,Based,研究,材料,生长,最高振荡频率,晶体管,应用,集成电路,模拟
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For analog IC applications,not only f T of Si transistor is concerned,but f max of Si transistors is also concerned.In this study,the research for improvement on SiGe HBT f max of 157GHz has been undertaken based on MBE SiGe materials.
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