%0 Journal Article
%T SiGe HBT with fmax of 157GHz Based on MBE<br>基于MBE的fmax为157GHz的SiGe HBT器件
%A Liu Daoguang
%A Hao Yue
%A Xu Shiliu
%A Li Kaicheng
%A Liu Yukui
%A He Kaiquan
%A Liu Rongkan
%A Zhang Jing
%A Liu Luncai
%A Xu Wanjing
%A Li Rongqiang
%A Chen Guangbing
%A and Xu Xueliang
%A <br>刘道广
%A 郝跃
%A 徐世六
%A 李开成
%A 刘玉奎
%A 何开全
%A 刘嵘侃
%A 张静
%A 刘伦才
%A 徐婉静
%A 李荣强
%A 陈光炳
%A 徐学良
%J 半导体学报
%D 2005
%I 
%X For analog IC applications,not only f T of Si transistor is concerned,but f max of Si transistors is also concerned.In this study,the research for improvement on SiGe HBT f max of 157GHz has been undertaken based on MBE SiGe materials.
%K self-align
%K air bridge
%K SiGe material<br>自对准
%K 空气桥
%K SiGe合金材料
%K SiGeHBT
%K 器件
%K Based
%K 研究
%K 材料
%K 生长
%K 最高振荡频率
%K 晶体管
%K 应用
%K 集成电路
%K 模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D823D3D19E4E8ADC&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=652E7E360EBE3082&eid=20ADD38F841C6A4B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=7