Structural and Optical Properties of InAs/InAlGaAs Quantum Dots Matrix Grown on InP Substrates
InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质

Self-assembled InAs quantum dots in InAlGaAs matrix are grown on InP (001) substrate by molecular beam epitaxy and evaluated by transmission electron microscopy and photoluminescence.Through introducing InAlGaAs buffer layer lattice-matched to InP substrate,large InAs QDs structure can be obtained.It is found that the structural and optical properties of InAs QDs are significantly affected by the surface characteristics of InAlGaAs layer.The nucleation and evolution mechanism of self-assembled QDs grown on InAlGaAs buffer layer is discussed.It is believed that the evolution of QDs represents as coalescence and growing accompanied by self-migration,in order to achieve the distribution energetically favorable.