%0 Journal Article
%T Structural and Optical Properties of InAs/InAlGaAs Quantum Dots Matrix Grown on InP Substrates<br>InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质
%A Huang Xiuqi
%A Liu Fengqi
%A Che Xiaoling
%A Liu Junqi
%A Lei Wen
%A WANG Zhanguo
%A <br>黄秀颀
%A 刘峰奇
%A 车晓玲
%A 刘俊岐
%A 雷文
%A 王占国
%J 半导体学报
%D 2005
%I 
%X Self-assembled InAs quantum dots in InAlGaAs matrix are grown on InP (001) substrate by molecular beam epitaxy and evaluated by transmission electron microscopy and photoluminescence.Through introducing InAlGaAs buffer layer lattice-matched to InP substrate,large InAs QDs structure can be obtained.It is found that the structural and optical properties of InAs QDs are significantly affected by the surface characteristics of InAlGaAs layer.The nucleation and evolution mechanism of self-assembled QDs grown on InAlGaAs buffer layer is discussed.It is believed that the evolution of QDs represents as coalescence and growing accompanied by self-migration,in order to achieve the distribution energetically favorable.
%K quantum dots
%K molecular beam epitaxy
%K InAlGaAs buffer layer<br>量子点
%K 分子束外延
%K InAlGaAs缓冲层
%K 多周期
%K InAs
%K 量子点阵列
%K 结构和光学性质
%K Optical
%K Properties
%K Structural
%K Substrates
%K Matrix
%K 分布状态
%K 能量最优
%K 徙动
%K 合并长大
%K 表现
%K 演化过程
%K 演化机制
%K 形核
%K 影响
%K 表面特性
%K 量子点结构
%K 缓冲层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B2242EDCFDE018B0&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=F637763636425CAF&eid=C2F76551C0111538&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=21