Formation of La, Ce and Nd Rare Earth Metal Silicides on Silicon
La,Ce及Nd稀土金属硅化物的生成

Auger Electron Spectroscopy, X-Ray Diffraction and Rutherford Backscattering Spectrometryare used to investigate the formation of La, Ce, and Nd rare earth metal silicides fromthermal and ion beam induced reaction between Si and rare earth metals. Metal-rich silicides,monosilicides, disilicides are formed at different growth conditions, such as annealing temperature,implantation dose, etc.The contamination of oxygen not only inhibits the formation ofsilicides, but also to some extent determine the silicide phases and the quality of thin films.The prominent influence of substrate temperature and coating overlayer to prevent from oxidationon roughness,uniformity,and quality of silicide thin film is also discussed.