%0 Journal Article
%T Formation of La, Ce and Nd Rare Earth Metal Silicides on Silicon<br>La,Ce及Nd稀土金属硅化物的生成
%A Mou Shanming/Institute of Semiconductors Academia Sinica
%A Beijing Wang Youxiang/Institute of Semiconductors Academia Sinica
%A Beijing Yin Shiduan/Institute of Semiconductors Academia Sinica
%A Beijing Zhang Jingping/Institute of Semiconductors Academia Sinica
%A Beijing Liu Jiarui/Institute of Physics
%A Academia Sinica
%A Beijing
%A <br>牟善明
%A 王佑祥
%A 殷士端
%A 张敬平
%A 刘家瑞
%J 半导体学报
%D 1990
%I 
%X Auger Electron Spectroscopy, X-Ray Diffraction and Rutherford Backscattering Spectrometryare used to investigate the formation of La, Ce, and Nd rare earth metal silicides fromthermal and ion beam induced reaction between Si and rare earth metals. Metal-rich silicides,monosilicides, disilicides are formed at different growth conditions, such as annealing temperature,implantation dose, etc.The contamination of oxygen not only inhibits the formation ofsilicides, but also to some extent determine the silicide phases and the quality of thin films.The prominent influence of substrate temperature and coating overlayer to prevent from oxidationon roughness,uniformity,and quality of silicide thin film is also discussed.
%K Rare earth metals
%K Silicides
%K Heat annealing reaction
%K lon beam mixing<br>稀土金属
%K 硅化物
%K 热反应
%K 离子束混合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=47DDB61F46FA06AF&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=FF58680609C9D068&eid=E49BED2EA9A8956B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0