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半导体学报 2002
Estimation of Widths of Si-SiO_2 Interfaces in Metal-Oxide-Semiconductor Structures from FN Tunneling Current Oscillations
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Abstract:
A method is presented for estimating the widths of interface in metal oxide semiconductor structures by using of the FN tunneling current oscillations.A numerical calculation shows that this method can estimate the width of interface accurately and conveniently.The interface widths are observed around 0 3nm using this method.
