%0 Journal Article
%T Estimation of Widths of Si-SiO_2 Interfaces in Metal-Oxide-Semiconductor Structures from FN Tunneling Current Oscillations<br>利用FN振荡电流估计金属-氧化物-半导体场效应管Si-SiO_2界面宽度
%A Yang Yao
%A Mao Lingfeng
%A <br>杨尧
%A 毛凌锋
%J 半导体学报
%D 2002
%I 
%X A method is presented for estimating the widths of interface in metal oxide semiconductor structures by using of the FN tunneling current oscillations.A numerical calculation shows that this method can estimate the width of interface accurately and conveniently.The interface widths are observed around 0 3nm using this method.
%K FN tunneling current
%K MOSFET
%K interface<br>FN隧穿电流
%K MOSFET
%K 界面
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3ECE0854FC71DAED&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=CA4FD0336C81A37A&sid=09ABD5535D9B6D45&eid=B9704B40A4225A24&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0