|
半导体学报 1990
Analysis of Ultra-Narrow Light Pulse Characteristics in a Semi conductor Laser with Common Cavity Two Sections Structure
|
Abstract:
Based on the rate equations,the analysis of the transient behavior which Ieads to a methodfor obtaining ultra-narrow light pulse is given.It shows that owing to strong Q-switch andlong delay effects in the device, a better quality ultsa-narrow light pulse under electric currentinjection can easily be achieved in comparison with that in a normal DH laser.