%0 Journal Article
%T Analysis of Ultra-Narrow Light Pulse Characteristics in a Semi conductor Laser with Common Cavity Two Sections Structure<br>双区共腔双稳激光器超短光脉冲输出特性分析
%A ZHAO Jianhe/Institute of Semiconductors
%A Academia Sinica
%A BeijingWU Ronghan/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>赵建和
%A 吴荣汉
%J 半导体学报
%D 1990
%I 
%X Based on the rate equations,the analysis of the transient behavior which Ieads to a methodfor obtaining ultra-narrow light pulse is given.It shows that owing to strong Q-switch andlong delay effects in the device, a better quality ultsa-narrow light pulse under electric currentinjection can easily be achieved in comparison with that in a normal DH laser.
%K Semiconductor laser
%K Optical bistability
%K Ultrafast light pulse<br>半导体激光器
%K 双稳态
%K 光脉冲
%K 输出
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=129C8DB4B65ADDFB&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=6209D9E8050195F5&eid=2001E0D53B7B80EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0