Study on Ion Co-Implantation of Be and P into InP and Its Annealing Behaviour
InP中的Be、P共注入及其退火特性研究

The comparison between Be single-implantation and Be, P co-implantation has been made.SIMS and electrochemical C-V measurement show that the indiffusion and redistribution duringfurnace annealing have been suppressed by co-implant ation.This results in higher activationand better junction characteristics.Doubling in activation and an order of reduction in p-njunction's leakage current have been reached.The mechanism has been discussed.