%0 Journal Article
%T Study on Ion Co-Implantation of Be and P into InP and Its Annealing Behaviour<br>InP中的Be、P共注入及其退火特性研究
%A Zhang Yonggang/
%A <br>张永刚
%A 富小妹
%A 潘慧珍
%J 半导体学报
%D 1989
%I 
%X The comparison between Be single-implantation and Be, P co-implantation has been made.SIMS and electrochemical C-V measurement show that the indiffusion and redistribution duringfurnace annealing have been suppressed by co-implant ation.This results in higher activationand better junction characteristics.Doubling in activation and an order of reduction in p-njunction's leakage current have been reached.The mechanism has been discussed.
%K Ion implantation
%K Thermal annealing
%K Beryllium
%K Phosphor
%K Compound semiconductor<br>离子注入
%K 热退火
%K 铍
%K 磷
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F3073D974BF7DBE57257&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=5D311CA918CA9A03&sid=9A596D09E9486F3E&eid=0636354D8CF77519&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0