Super Performance InGap/GaAs HBT with Novel Structure
高性能新结构InGaP/GaAs异质结双极型晶体管(英文)

A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.