%0 Journal Article
%T Super Performance InGap/GaAs HBT with Novel Structure<br>高性能新结构InGaP/GaAs异质结双极型晶体管(英文)
%A Bai Dafu
%A Liu Xunchun
%A Wang Runmei
%A Yuan Zhipeng
%A Sun Haifeng
%A <br>白大夫
%A 刘训春
%A 王润梅
%A 袁志鹏
%A 孙海锋
%J 半导体学报
%D 2004
%I 
%X A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.
%K heterojunction bipolar transistor
%K U
%K shaped emitter
%K self
%K aligned emitter
%K thermal handling capacity<br>异质结双极型晶体管
%K U形发射极
%K 自对准发射极
%K 热处理能力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B9F59F8EA22E7554&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=895BB10EB8F3BD49&eid=A67EE05E56DA7F45&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=4