Simulation of Spin-Polarized Transport in SiGe/Ge/SiGe Heterostructure
SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟

The Monte Carlo approach is utilized to study spin-polarized transport in SiGe/Ge/SiGe heterostructure.The hole spin precession is controlled by the Rashba spin-orbit interaction in 2DHG formed in Ge channel modulation-doped structure.Spin-polarized properties,including the spin scattering length and the spin polarization,are investigated at the temperature ranging from 77 to 300K.Simulation results from Monte-Carlo show that at a low temperature or by a narrow 2D-channel,the spin relaxation can be effectively reduced and the spin scattering length can be increased.The gate-controlled spin effect of the drain current induces a large improvement of transconductance,or a negative transconductance effect.