%0 Journal Article
%T Simulation of Spin-Polarized Transport in SiGe/Ge/SiGe Heterostructure<br>SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟
%A Zou Jianping
%A Tian Lilin
%A Yu Zhiping
%A <br>邹建平
%A 田立林
%A 余志平
%J 半导体学报
%D 2005
%I 
%X The Monte Carlo approach is utilized to study spin-polarized transport in SiGe/Ge/SiGe heterostructure.The hole spin precession is controlled by the Rashba spin-orbit interaction in 2DHG formed in Ge channel modulation-doped structure.Spin-polarized properties,including the spin scattering length and the spin polarization,are investigated at the temperature ranging from 77 to 300K.Simulation results from Monte-Carlo show that at a low temperature or by a narrow 2D-channel,the spin relaxation can be effectively reduced and the spin scattering length can be increased.The gate-controlled spin effect of the drain current induces a large improvement of transconductance,or a negative transconductance effect.
%K spin-FET
%K Rashba spin-orbit interaction
%K Monte Carlo approach<br>自旋场效应晶体管
%K Rashba自旋轨道相互作用
%K 蒙特卡罗方法
%K SiGe
%K 异质结构
%K 自旋极化率
%K 输运特性
%K 模拟结果
%K Transport
%K Simulation
%K 相关效应
%K 跨导
%K 器件
%K 电流
%K 栅控
%K 衰减
%K 影响
%K 散射长度
%K 宽度
%K 低温
%K 显示
%K 研究
%K 温度范围
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C3CC425AFF048088&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=BF112261B65CB9C9&eid=358F98408588E522&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=15