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半导体学报 2001
DC Characteristics of Metal-Semiconductor-Metal Photodetector
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Abstract:
The 1 D DC circuit level model of a metal semiconductor metal photodetector is built and presented,whose photocurrents are analysized by using the steady state continuity equations.The analytical solutions of the carrier density and the photocurrent are derived.The quantum efficiency (the number of electron hole pairs generated per incident photon) is calculated and the model is simulated by using PSPICE.The results are in good agreement with the experiment data.
