%0 Journal Article
%T DC Characteristics of Metal-Semiconductor-Metal Photodetector<br>MSM光探测器的直流特性
%A WU shu
%A LIN Shi ming
%A LIU Wen kai
%A <br>武术
%A 林世鸣
%A 刘文楷
%J 半导体学报
%D 2001
%I 
%X The 1 D DC circuit level model of a metal semiconductor metal photodetector is built and presented,whose photocurrents are analysized by using the steady state continuity equations.The analytical solutions of the carrier density and the photocurrent are derived.The quantum efficiency (the number of electron hole pairs generated per incident photon) is calculated and the model is simulated by using PSPICE.The results are in good agreement with the experiment data.
%K metal
%K semiconductor
%K metal photodetector
%K DC
%K steady
%K state
%K InGaAs<br>MSM光探测器
%K 直流
%K 稳态
%K 等效电路
%K InGaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2FAC50B154F2D58C&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=B60306E6036A044A&eid=9BE3F470BE08362E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=12