Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method
Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method

Keywords: SiGe HBT,GSMBE,ECV
GSMBE,ECV,锗化硅,结构材料,HBJ

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Abstract:

In recent years Si Ge Molecular Beam Epitaxy(MBE) has attracted much attentiondue to its application in researching new elements for high performance CMOSand bipolartechnologies1 ] . For example,Si/Si Ge/Si n-p-n HBT has been attache...

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