%0 Journal Article
%T Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance-Voltage Method<br>Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method
%A LIN Yan-Xia
%A HUANG Da-ding
%A ZHANG Xiu-lan
%A LIU Jin-ping
%A LI Jian-ping
%A GAO Fei
%A SUN Dian-zhao
%A ZENG Yi-ping
%A KONG Mei-ying
%A <br>林燕霞
%A 黄大定
%A 张秀兰
%A 刘金平
%A 李建平
%A 高飞
%A 孙殿照
%A 曾一平
%A 孔梅影
%J 半导体学报
%D 2000
%I 
%X In recent years Si Ge Molecular Beam Epitaxy(MBE) has attracted much attentiondue to its application in researching new elements for high performance CMOSand bipolartechnologies1 ] . For example,Si/Si Ge/Si n-p-n HBT has been attache...
%K SiGe HBT
%K GSMBE
%K ECV<br>GSMBE
%K ECV
%K 锗化硅
%K 结构材料
%K HBJ
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B6AB05A43E55A9E3&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=708DD6B15D2464E8&sid=208AC7DC28BD1EC6&eid=1A775ABEB80E436B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13