Annealing Behavior of Si1-xGex/Si Heterostructures
Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

The behavior of Si 1- x Ge x /Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.