%0 Journal Article
%T Annealing Behavior of Si1-xGex/Si Heterostructures<br>Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures
%A YU Zhuo
%A LI Dai
%A |zong
%A CHENG Bu
%A |wen
%A LI Cheng
%A LEI Zhen lin
%A HUANG Chang jun
%A ZHANG Chun hui
%A YU Jin zhong
%A WANG Qi
%A |ming
%A LIANG Jun
%A |wu
%A <br>于卓
%A 李代宗
%A 成步文
%A 李成
%A 雷震霖
%A 黄昌俊
%A 张春辉
%A 余金中
%A 王启明
%A 梁骏吾
%J 半导体学报
%D 2000
%I 
%X The behavior of Si 1- x Ge x /Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.
%K SiGe
%K heterojunction
%K annealing<br>异质结
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A4C1720BF5F55EC8&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=F3090AE9B60B7ED1&sid=CFC2B32D03D9F610&eid=78AF84DBB4041008&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=4