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半导体学报 1990
Studies of Electronic States in GaInPAs/InP Lattice-matched Superlattice
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Abstract:
The electronic structure of GaInPAs/InP(110) lattice-matched superlattice is studied. Theband dispersion relation of thin-layer superlattice is compared with that of the alloy with thesame chemical composition.The densities of states at band edges and the energy gap versuscomposition and thickness are analysed.The results show that though the similarity appears inband dispersion relations between thin-layer superla(?)tice and the corresponding alloy with thesame composition,the density of states at band edges distributes particularly in the alloy layersof the superlattice, which reveals a precursor sate of quantum well formation.
