%0 Journal Article
%T Studies of Electronic States in GaInPAs/InP Lattice-matched Superlattice
GaInPAs/InP晶格匹配超晶格材料电子态研究
%A Shen Jingzhi/
%A
沈静志
%A 徐至中
%J 半导体学报
%D 1990
%I
%X The electronic structure of GaInPAs/InP(110) lattice-matched superlattice is studied. Theband dispersion relation of thin-layer superlattice is compared with that of the alloy with thesame chemical composition.The densities of states at band edges and the energy gap versuscomposition and thickness are analysed.The results show that though the similarity appears inband dispersion relations between thin-layer superla(?)tice and the corresponding alloy with thesame composition,the density of states at band edges distributes particularly in the alloy layersof the superlattice, which reveals a precursor sate of quantum well formation.
%K superlattice
%K electronic states
%K energy gap
%K dispersion relation of energy band
超晶格
%K 电子态
%K 能隙
%K 能带色散关系
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=720BBDB6FFEA6EE45DB733DB1FDB1372&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=FD7C952458BFB5D8&eid=FE4C96E058BB2280&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0