Photoluminescence Peaks from α-SiOxNy Thin Films
α-SiO_xN_y薄膜中分立能级的光发射

Amorphous SiO\- x N\- y thin films were deposited by PECVD technique. Strong photoluminescence peaks centering at 330,340,345,735 and 745nm from prepared samples were observed at room temperature. The relation between PL peaks and the content of N and O has been investigated. The results show that the position of PL peaks does not move, and the occurrence of the peaks depends on the coexistence of N and O in the films. The intensity of the peak increases to the maximum when the atomic content of N and O is about 30%. It indicates that PL peaks might originate from the luminescence centers due to the O\|Si\|N defect.